參數(shù)資料
型號: HY5DU281622ET-26
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 128M(8Mx16) GDDR SDRAM
中文描述: 8M X 16 DDR DRAM, 0.6 ns, PDSO66
封裝: 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁數(shù): 1/34頁
文件大?。?/td> 379K
代理商: HY5DU281622ET-26
HY5DU281622ET
128M(8Mx16) GDDR SDRAM
HY5DU281622ET
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any respon-
sibility for use of circuits described. No patent licenses are implied.
Rev. 0.5 / Jan. 2005 1
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PDF描述
HY5DU281622ET-28 128M(8Mx16) GDDR SDRAM
HY5DU281622ET-30 128M(8Mx16) GDDR SDRAM
HY5DU281622ET-33 128M(8Mx16) GDDR SDRAM
HY5DU281622ET-36 128M(8Mx16) GDDR SDRAM
HY5DU281622ET-4 128M(8Mx16) GDDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DU281622ET-28 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM
HY5DU281622ET-30 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM
HY5DU281622ET-33 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM
HY5DU281622ET-36 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM
HY5DU281622ET-4 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM