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參數(shù)資料
| 型號： | HY5DU281622ET-25 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 128M(8Mx16) GDDR SDRAM |
| 中文描述： | 8M X 16 DDR DRAM, 0.55 ns, PDSO66 |
| 封裝： | 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
| 文件頁數(shù)： | 23/34頁 |
| 文件大?。?/td> | 379K |
| 代理商： | HY5DU281622ET-25 |
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Rev. 0.5 / Jan. 2005
23
HY5DU281622ET
DC CHARACTERISTICS II
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note :
1. I
DD1, IDD4
and I
DD5
depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of t
RFC
(Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Parameter
Symbol
Test Condition
Speed
Unit
Note
36
4
5
Operating Current
I
DD0
One bank; Active - Precharge;
tRC=tRC(min); tCK=tCK(min); DQ,DM
and DQS inputs changing twice per
clock cycle; address and control inputs
changing once per clock cycle
180
170
160
mA
1
Operating Current
I
DD1
Burst length=2, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
180
170
160
mA
1
Precharge Standby Cur-
rent in Power Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
CK
=min
40
40
40
mA
Precharge Standby Cur-
rent in Non Power Down
Mode
I
DD2N
CKE
≥
V
IH
(min), /CS
≥
V
IH
(min), t
CK
=
min, Input signals are changed one
time during 2clks
100
90
80
mA
Active Standby Current in
Power Down Mode
I
DD3P
CKE
≤
V
IL
(max), t
CK
=min
40
40
40
mA
Active Standby Current in
Non Power Down Mode
I
DD3N
CKE
≥
V
IH
(min), /CS
≥
V
IH
(min),
t
CK
=min, Input signals are changed one
time during 2clks
140
130
120
mA
Burst Mode Operating Cur-
rent
I
DD4
t
CK
≥
t
CK
(min), I
OL
=0mA
All banks active
280
260
240
mA
1
Auto Refresh Current
I
DD5
t
RC
≥
t
RFC
(min),
All banks active
280
260
240
mA
1,2
Self Refresh Current
I
DD6
CKE
≤
0.2V
4
4
4
mA
Operating Current - Four
Bank Operation
I
DD7
Four bank interleaving with BL=4, Refer
to the following page for detailed test
condition
430
410
390
mA
相關(guān)PDF資料 |
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|---|---|
| HY5DU281622ET-26 | 128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-28 | 128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-30 | 128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-33 | 128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-36 | 128M(8Mx16) GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DU281622ET-26 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-30 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-33 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-36 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
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