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參數(shù)資料
| 型號： | HY5DU281622ET-25 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 128M(8Mx16) GDDR SDRAM |
| 中文描述： | 8M X 16 DDR DRAM, 0.55 ns, PDSO66 |
| 封裝： | 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
| 文件頁數(shù)： | 17/34頁 |
| 文件大?。?/td> | 379K |
| 代理商： | HY5DU281622ET-25 |
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Rev. 0.5 / Jan. 2005
17
HY5DU281622ET
MODE REGISTER SET (MRS)
The mode register is used to store the various operating modes such as /CAS latency, addressing mode, burst length,
burst type, test mode, DLL reset. The mode register is program via MRS command. This command is issued by the low
signals of /RAS, /CAS, /CS, /WE and BA0. This command can be issued only when all banks are in idle state and CKE
must be high at least one cycle before the Mode Register Set Command can be issued. Two cycles are required to write
the data in mode register. During the the MRS cycle, any command cannot be issued. Once mode register field is
determined, the information will be held until resetted by another MRS command.
A2
A1
A0
Burst Length
Sequential
Interleave
0
0
0
Reserved
Reserved
0
0
1
2
2
0
1
0
4
4
0
1
1
8
8
1
0
0
Reserved
Reserved
1
0
1
Reserved
Reserved
1
1
0
Reserved
Reserved
1
1
1
Reserved
Reserved
A3
Burst Type
0
Sequential
1
Interleave
A7
Test Mode
0
Normal
1
Vendor
test mode
A8
DLL Reset
0
No
1
Yes
BA0
MRS Type
0
MRS
1
EMRS
BA1
BA0
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
0
RFU*
DR
TM
CAS Latency
BT
Burst Length
* All bits in RFU address fields must be programmed to Zero, all other states are reserved for future usage.
And, if MRS/EMRS are programmed with ‘Reserved’ code, it could be the cause of mal-function.
A6
A5
A4
CAS Latency
0
0
0
Reserved
0
0
1
Reserved
0
1
0
Reserved
0
1
1
3
1
0
0
4
1
0
1
5
1
1
0
Reserved
1
1
1
Reserved
相關(guān)PDF資料 |
PDF描述 |
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| HY5DU281622ET-26 | 128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-28 | 128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-30 | 128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-33 | 128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-36 | 128M(8Mx16) GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DU281622ET-26 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-30 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-33 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-36 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
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