參數(shù)資料
型號(hào)： HY5DU12422BLT-H
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 128M X 4 DDR DRAM, 0.75 ns, PDSO66
封裝： 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁數(shù)： 10/31頁
文件大?。?/td> 686K
代理商： HY5DU12422BLT-H
Rev. 1.1 / Apr. 2006
18
1HY5DU12422B(L)T
HY5DU12822B(L)T
HY5DU121622B(L)T
ABSOLUTE MAXIMUM RATINGS
Note: Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Note:
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on VREF may not exceed ± 2% of the DC value.
4. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temper-
ature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum dif-
ference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum
pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
6. VIN=0 to VDD, All other pins are not tested under VIN = 0V.
7. DQs are disabled, VOUT=0 to VDDQ
Parameter
Symbol
Rating
Unit
Operating Temperature (Ambient)
TA
0 ~ 70
oC
Storage Temperature
TSTG
-55 ~ 150
oC
Voltage on VDD relative to VSS
VDD
-1.0 ~ 3.6
V
Voltage on VDDQ relative to VSS
VDDQ
-1.0 ~ 3.6
V
Voltage on inputs relative to VSS
VINPUT
-1.0 ~ 3.6
V
Voltage on I/O pins relative to VSS
VIO
-0.5 ~3.6
V
Output Short Circuit Current
IOS
50
mA
Soldering Temperature
Time
TSOLDER
260
10
oC Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Power Supply Voltage (DDR200, 266, 333)
VDD
2.3
2.5
2.7
V
Power Supply Voltage (DDR200, 266, 333)1
VDDQ
2.3
2.5
2.7
V
Power Supply Voltage (DDR400)
VDD
2.5
2.6
2.7
V
Power Supply Voltage (DDR400)1
VDDQ
2.5
2.6
2.7
V
Input High Voltage
VIH
VREF + 0.15
-
VDDQ + 0.3
V
Input Low Voltage2
VIL
-0.3
-
VREF - 0.15
V
Termination Voltage
VTT
VREF - 0.04
VREF
VREF + 0.04
V
Reference Voltage3
VREF
0.49*VDDQ
0.5*VDDQ
0.51*VDDQ
V
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
-
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs4
VID(DC)
0.36
-
VDDQ+0.6
V
V-I Matching: Pullup to Pulldown Current Ratio5
VI(RATIO)
0.71
-
1.4
-
Input Leakage Current6
ILI
-2
-
2
uA
Output Leakage Current7
ILO
-5
-
5
uA
Normal Strength
Output Driver
(VOUT=VTT ±0.84)
Output High Current
(min VDDQ, min VREF, min VTT)
IOH
-16.8
-
mA
Output Low Current
(min VDDQ, max VREF, max VTT)
IOL
16.8
-
mA
Half Strength
Output Driver
(VOUT=VTT ±0.68)
Output High Current
(min VDDQ, min VREF, min VTT)
IOH
-13.6
-
mA
Output Low Current
(min VDDQ, max VREF, max VTT)
IOL
13.6
-
mA
相關(guān)PDF資料
PDF描述
HY86-12LF 90-Degree Hybrid 0.82-0.90 GHz
HYB25D128400CT-5 32M X 4 DDR DRAM, 0.7 ns, PDSO66
HYB25D256160CC-5 256 Mbit Double Data Rate SDRAM
HYB25S256160AC-7.5 16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54
HYB39S128160TEL-37 MEMORY SPECTRUM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DU12422BLTP 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM
HY5DU12422BLTP-X 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM
HY5DU12422BT 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM
HY5DU12422BT_06 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM
HY5DU12422BT-H-A 制造商:Hynix Semi 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*