參數(shù)資料
型號(hào)： HY29LV800T-55I
廠商： Hynix Semiconductor Inc.
英文描述： 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
中文描述： 8兆位（100萬(wàn)x 8/512K × 16）低壓快閃記憶體
文件頁(yè)數(shù)： 31/40頁(yè)
文件大?。?/td> 556K
代理商： HY29LV800T-55I
31
Rev. 1.0/Nov. 01
HY29LV800
AC CHARACTERISTICS
Notes:
1. VA = Valid Address for reading Toggle Bits (DQ[2], DQ[6]) status data (see Write Operation Status section).
2. Illustration shows first two status read cycles after command sequence, last status read cycle and array data read cycle.
Figure 22. Toggle Polling Timings (During Automatic Algorithms)
t
BUSY
t
CH
t
OE
t
CE
t
RC
VA
Complement
Complement
True
Valid Data
Status Data
Status Data
Data
Valid Data
RY/BY#
DQ[6:0]
DQ[7]
WE#
OE#
CE#
Addresses
VA
VA
t
ACC
t
OEH
t
OH
t
DF
Notes:
1. VA = Valid Address for reading Data# Polling status data (see Write Operation Status section).
2. Illustration shows first status cycle after command sequence, last status read cycle and array data read cycle.
Figure 21. Data# Polling Timings (During Automatic Algorithms)
t
BUSY
t
CH
t
OE
t
CE
t
RC
Valid Status
Valid Status
Valid Status
RY/BY#
DQ[6], [2]
WE#
OE#
CE#
Addresses
VA
VA
VA
t
OEH
t
OH
t
DF
VA
(second read)
(first read)
(stops toggling)
Valid Data
t
ACC
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