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參數(shù)資料
| 型號(hào)： | HY29LV800T-55I |
| 廠(chǎng)商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
| 中文描述： | 8兆位（100萬(wàn)x 8/512K × 16）低壓快閃記憶體 |
| 文件頁(yè)數(shù)： | 10/40頁(yè) |
| 文件大小： | 556K |
| 代理商： | HY29LV800T-55I |
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10
Rev. 1.0/Nov. 01
HY29LV800
START
(Note:
All sectors must be
protected prior to
unprotecting any sector)
TRYCNT = 1
SNUM = 0
RESET# = V
ID
Wait 1 us
Write 0x60 to device
Write 0x60 to Address
Set Address:
A[18:12] = Sector SNUM
A[6] = 1, A]1] = 1, A]0] = 0
Write 0x40 to Address
Read from Address
Data = 0x00
SNUM = 18
YES
TRYCNT = 1000
NO
Increment TRYCNT
NO
YES
DEVICE FAILURE
YES
NO
RESET# = V
IH
Write Reset Command
SECTOR UNPROTECT
COMPLETE
SNUM = SNUM + 1
Wait 15 ms
Set Address:
A[6] = 1, A]1] = 1, A]0] = 0
Figure 2. Sector Unprotect Algorithm
START
RESET# = V
(All protected sectors
become unprotected)
Perform Program or Erase
Operations
RESET# = V
(All previously protected
sectors return to protected
state)
TEMPORARY SECTOR
UNPROTECT COMPLETE
Figure 3. Temporary Sector Unprotect
Algorithm
grammed with its corresponding programming al-
gorithm.
Two methods are provided for accessing the Elec-
tronic ID data. The first requires V
ID
on address
pin A[9], with additional requirements for obtain-
ing specific data items listed in Table 4.
The Elec-
tronic ID data can also be obtained by the host
through specific commands issued via the com-
mand register, as described in the
‘
Device Com-
mands
’
section of this data sheet.
While in the high-voltage Electronic ID mode, the
system may read at specific addresses to obtain
certain device identification and status information:
A read cycle at address 0xXXX00 retrieves the
manufacturer code.
A read cycle at address 0xXXX01 in Word
mode or 0xXXX02 in Byte mode returns the
device code.
A read cycle containing a sector address (SA)
in A[18:12] and the address 0x02 in Word mode
or 0x04 in Byte mode, returns 0x01 if that sec-
tor is protected, or 0x00 if it is unprotected.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29LV800T-70 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
| HY29LV800T-70I | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
| HY29LV800T-90 | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
| HY29LV800T-90I | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
| HY2A112DC | 制造商:IMO Precision Controls Ltd 功能描述:RELAY DPNO 12VDC 制造商:IMO Precision Controls Ltd 功能描述:RELAY, DPNO, 12VDC 制造商:IMO 功能描述:RELAY, DPNO, 12VDC, Product Range:IMO - HY Series, Coil Voltage:12VDC, Contact C 制造商:IMO Precision Controls Ltd 功能描述:RELAY, DPNO, 12VDC, Product Range:IMO - HY Series, Coil Voltage:12VDC, Contact Current:25A, Contact Voltage VAC:250V, Contact Configuration:DPNO, Coil Resistance:75ohm, Relay Mounting:Quick Connect, SVHC:No SVHC (20-Jun-2013), , RoHS Compliant: Yes |
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