參數資料
型號： HY29LV800T-70
廠商： Hynix Semiconductor Inc.
英文描述： 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
中文描述： 8兆位（100萬x 8/512K × 16）低壓快閃記憶體
文件頁數： 1/40頁
文件大?。?/td> 556K
代理商： HY29LV800T-70
Preliminary
Revision 1.0, November 2001
KEY FEATURES
Single Power Supply Operation
– Read, program and erase operations from
2.7 to 3.6 volts
– Ideal for battery-powered applications
High Performance
– 70 and 90 ns access time versions for full
voltage range operation
– 55 ns access time version for operation
from 3.0 to 3.6 volts
Ultra-low Power Consumption (Typical
Values)
– Automatic sleep mode current: 0.2 μA
– Standby mode current: 0.2 μA
– Read current: 7 mA (at 5 Mhz)
– Program/erase current: 15 mA
Flexible Sector Architecture:
– One 16 KB, two 8 KB, one 32 KB and
fifteen 64 KB sectors in byte mode
– One 8 KW, two 4 KW, one 16 KW and
fifteen 32 KW sectors in word mode
– Top or bottom boot block configurations
available
Sector Protection
– Allows locking of a sector or sectors to
prevent program or erase operations
within that sector
– Sectors lockable in-system or via
programming equipment
– Temporary Sector Unprotect allows
changes in locked sectors (requires high
voltage on RESET# pin)
Fast Program and Erase Times
– Sector erase time: 0.5 sec typical for each
sector
– Chip erase time: 10 sec typical
– Byte program time: 9
μ
s typical
– Word program time: 11
μ
s typical
Unlock Bypass Program Command
– Reduces programming time when issuing
multiple program command sequences
Automatic Erase Algorithm Preprograms
and Erases Any Combination of Sectors
or the Entire Chip
Automatic Program Algorithm Writes and
Verifies Data at Specified Addresses
A[18:0]
19
CE#
OE#
RESET#
BYTE#
WE#
8
7
DQ[7:0]
DQ[14:8]
DQ[15]/A[-1]
RY/BY#
LOGIC DIAGRAM
Minimum 100,000 Write Cycles per Sector
Compatible With JEDEC standards
–
Pinout and software compatible with
single-power supply Flash devices
–
Superior inadvertent write protection
Data# Polling and Toggle Bits
–
Provide software confirmation of
completion of program and erase
operations
Ready/Busy# Pin
–
Provides hardware confirmation of
completion of program and erase
operations
Erase Suspend/Erase Resume
–
Suspends an erase operation to allow
reading data from, or programming data
to, a sector that is not being erased
–
Erase Resume can then be invoked to
complete suspended erasure
Hardware Reset Pin (RESET#) Resets the
Device to Reading Array Data
Space Efficient Packaging
–
44-pin PSOP, 48-pin TSOP and 48-ball
FBGA packages
HY29LV800
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
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PDF描述
HY29LV800T-70I 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
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相關代理商/技術參數
參數描述
HY29LV800T-70I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800T-90 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800T-90I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY2A112DC 制造商:IMO Precision Controls Ltd 功能描述:RELAY DPNO 12VDC 制造商:IMO Precision Controls Ltd 功能描述:RELAY, DPNO, 12VDC 制造商:IMO 功能描述:RELAY, DPNO, 12VDC, Product Range:IMO - HY Series, Coil Voltage:12VDC, Contact C 制造商:IMO Precision Controls Ltd 功能描述:RELAY, DPNO, 12VDC, Product Range:IMO - HY Series, Coil Voltage:12VDC, Contact Current:25A, Contact Voltage VAC:250V, Contact Configuration:DPNO, Coil Resistance:75ohm, Relay Mounting:Quick Connect, SVHC:No SVHC (20-Jun-2013), , RoHS Compliant: Yes
HY2A1230AC 制造商:IMO Precision Controls Ltd 功能描述:RELAY DPNO 230VAC 制造商:IMO PRECISION CONTROLS 功能描述:RELAY, DPNO, 230VAC 制造商:IMO Precision Controls Ltd 功能描述:RELAY, DPNO, 230VAC; Relay Type:General Purpose; Coil Voltage VAC Nom:240V; Contact Current Max:25A; Contact Voltage AC Nom:250V; Coil Resistance:208kohm; Contact Configuration:DPNO; Coil Type:AC; Coil Current:10.8mA; Nom Operating ;RoHS Compliant: Yes
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