參數(shù)資料
型號: HY29LV800T-70
廠商: Hynix Semiconductor Inc.
英文描述: 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
中文描述: 8兆位(100萬x 8/512K × 16)低壓快閃記憶體
文件頁數(shù): 34/40頁
文件大?。?/td> 556K
代理商: HY29LV800T-70
34
Rev. 1.0/Nov. 01
HY29LV800
AC CHARACTERISTICS
0x555 for Program
0x2AA for Erase
PA for Program
SA for Sector Erase
0x555 for Chip Erase
t
WS
t
RH
t
WH
CE#
OE#
Addresses
t
WC
VA
t
AS
t
AH
WE#
Data
RY/BY#
t
DS
Status
D
OUT
t
BUSY
t
WHWH1
or t
WHWH2
or t
WHWH3
t
DH
0xA0 for Program
0x55 for Erase
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
RESET#
t
CP
t
CPH
t
GHEL
Notes:
1.
PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write Opera-
tion Status section), D
OUT
= array data read at VA.
Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.
Word mode addressing shown.
RESET# shown only to illustrate t
RH
measurement references. It cannot occur as shown during a valid command
sequence.
2.
3.
4.
Figure 26. Alternate CE# Controlled Write Operation Timings
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