參數(shù)資料
型號(hào): HY29LV800T-55I
廠商: Hynix Semiconductor Inc.
英文描述: 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
中文描述: 8兆位(100萬(wàn)x 8/512K × 16)低壓快閃記憶體
文件頁(yè)數(shù): 22/40頁(yè)
文件大小: 556K
代理商: HY29LV800T-55I
22
Rev. 1.0/Nov. 01
HY29LV800
DC CHARACTERISTICS
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Notes:
1. The I
current is listed is typically less than 2 mA/MHz with OE# at V
. Typical V
CC
is 3.0 V.
2. All specifications are tested with V
= V
Max unless otherwise noted.
3. I
active while the Automatic Erase or Automatic Program algorithm is in progress.
4. Not 100% tested.
5. Automatic sleep mode is enabled when addresses remain stable for t
ACC
+ 30 ns (typical).
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