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參數(shù)資料
| 型號(hào)： | HMMC-5040 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 放大器 |
| 英文描述： | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0677 X 0.0299 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 650K |
| 代理商： | HMMC-5040 |
5
VDD = 4.5 V, IDD = 300 mA at TA = 25°C
40
35
30
25
20
15
35
30
25
20
15
10
Small-signal
gain
(dB)
Compressed
output
power
(dBm)
Operating temperature (°C)
–60
–30
0
+30
+60
+90
Power
Gain
0.06 dB/°C
22 GHz
28 GHz
38 GHz
25 GHz
30 GHz
35 GHz
40 GHz
Figure 6. Small-signal gain1 and compressed power2
vs. temperature
20
16
12
8
4
0
Noise
gure
(dB)
Frequency (GHz)
20
24
28
32
36
40
VDD = 4.5 V, IDD = 300 mA
VDD = 3.0 V, IDD = 130 mA
VDD = 2.0 V, IDD = 170 mA
Figure 7. Noise figure vs. frequency
VDD = 4.5 V
25
21
17
13
9
5
23
21
19
17
15
13
Output
power
,P
sat
(dBm)
Power-added
efciency
at
P
sat
(%)
Total drain current, IDD (mA)
100
200
300
Power
Efciency
23 GHz
38 GHz
28 GHz
42 GHz
Figure 8. Output power2 and efficiency vs. drain current
with V
DD = 4.5 V
VDD = 3 V
25
21
17
13
9
5
23
21
19
17
15
13
Output
power
,P
sat
(dBm)
Power-added
efciency
at
P
sat
(%)
Total drain current, IDD (mA)
100
200
300
Power
Efciency
23 GHz
38 GHz
28 GHz
42 GHz
Figure 9. Output power2 and efficiency vs. drain current
with V
DD = 3 V
VDD = 4.5 V, IDD = 300 mA, f = 40 GHz
30
26
22
18
14
10
20
15
10
5
0
Gain
(dB)
Power-added
efciency
(%)
Output power (dBm)
6
1014
1822
26
Gain
η added
Figure 10. Gain compression and efficiency characteristics3
VDD = 4.5 V, IDD = 300 mA
30
26
22
18
14
10
30
26
22
18
14
10
Output
power
,P
–1
dB
and
P
sat
(dBm)
Small-signal
gain
(dB)
Frequency (GHz)
20
24
28
32
36
40
Gain
Psat
P–1 dB
Figure 11. Output power and gain vs. frequency characteristics3
1
Measurements taken on a device mounted in a connectorized package calibrated at the connector terminals
2
Output power into 50 ohms with 2 dBm input power
3
Wafer-probed measurements
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