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參數(shù)資料
| 型號(hào)： | HMMC-5040 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 放大器 |
| 英文描述： | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0677 X 0.0299 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 650K |
| 代理商： | HMMC-5040 |
Features
Large bandwidth:
20 to 44 GHz typical
21 to 40 GHz specified
High gain: 22 dB typical
Saturated output power:
21 dB typical
Supply bias:
≤ 4.5 volts @ ≤ 300 mA
Agilent HMMC-5040
20–40 GHz Amplifier
1GG6-4066
Data Sheet
Chip size:
1720 x 760 m (67.7 x 29.9 mils)
Chip size tolerance: ±10 m (±0.4 mils)
Chip thickness:
127 ± 15 m (5.0 ± 0.6 mils)
Pad dimensions:
80 x 80 m (3.1 x 3.1 mils)
Description
The HMMC-5040 is a high-gain
broad-band MMIC amplifier designed
for both military applications and
commercial communication systems.
This four stage amplifier has input and
output matching circuitry for use in
50 ohm environments. It is fabricated
using a PHEMT integrated circuit
structure that provides exceptional
broadband performance. The backside
of the chip is both RF and DC ground.
This helps simplify the assembly
process and reduces assembly related
performance variations and costs. This
MMIC is a cost effective alternative
to hybrid (discrete-FET) amplifiers that
require complex tuning and assembly
processes.
Absolute maximum ratings1
Symbol
Parameters/conditions
Minimum
Maximum
Units
V
1,2-3-4
Drain supply voltages
5
Volts
V
G1,2,3-4
Gate supply voltages
–3.0
0.5
Volts
I
DD
Total drain current
400
mA
P
in
RF input power
21
dBm
T
ch
Channel temperature2
160
°C
T
A
Backside ambient temperature
–55
+75
°C
T
st
Storage temperature
–65
+165
°C
T
max
Maximum assembly temperature
300
°C
1
Absolute maximum ratings for continuous operation unless otherwise noted.
2
Refer to DC specifications/physical properties table for derating information.
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