- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄60851 > HMMC-5618 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER PDF資料下載
參數(shù)資料
| 型號： | HMMC-5618 |
| 元件分類： | 放大器 |
| 英文描述： | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 72K |
| 代理商： | HMMC-5618 |
6 –20 GHz Amplifier
Technical Data
Features
High Efficiency:
11% @ P-1dB Typical
Output Power, P-1dB:
18 dBm Typical
High Gain:
14 dB Typical
Flat Gain Response:
±0.5 dB Typical
Low Input/Output VSWR:
<1.7:1 Typical
Single Supply Bias:
5 volts (@ 115 mA Typical)
with Optional Gate Bias
Description
The HMMC-5618 6–20 GHz MMIC
is an efficient two-stage amplifier
that is designed to be used as a
cascadable intermediate gain
block for EW applications. In
communication systems, it can be
used as an amplifier for a local
oscillator, or as a transmit
amplifier. It is fabricated using a
PHEMT integrated circuit struc-
ture that provides exceptional
efficiency and flat gain perfor-
mance. During typical operation,
with a single 5-volt DC power
supply, each gain stage is biased
for Class-A operation for optimal
power output with minimal
distortion. The RF input and RF
output has matching circuitry for
use in 50 ohm environments.
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VD1, VD2
Drain Supply Voltage
V
5.5
VG1
Optional Gate Supply Voltage
V
-5
+1
VG2
Optional Gate Supply Voltage
V
-10
+1
ID1
Drain Supply Current
mA
70
ID2
Drain Supply Current
mA
84
Pin
RF Input Power[2]
dBm
20
Tch
Channel Temp.[3]
°C
+160
TA
Backside Ambient Temp.
°C
-55
+100
TSTG
Storage Temperature
°C
-65
+150
Tmax
Maximum Assembly Temp.
°C
+300
Notes:
1. Absolute maximum ratings for continuous operation unless otherwise noted.
2. Operating at this power level for extended (continuous) periods is not
recommended.
3. Refer to DC Specifications/Physical Properties table for derating information.
HMMC-5618
Chip Size:
920 x 920
m (36.2 x 36.2 mils)
Chip Size Tolerance:
±10 m (±0.4 mils)
Chip Thickness:
127
± 15 m (5.0 ± 0.6 mils)
Pad Dimensions:
80 x 80
m (3.2 x 3.2 mils)
The backside of the chip is both
RF and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and costs.
The MMIC is a cost effective
alternative to hybrid (discrete-
FET) amplifiers that require
complex tuning and assembly
processes.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMR223.3G | 240 MHz MOBILE STATION ANTENNA, 5.1 dBi GAIN |
| HMU-PAT-FH-K103 | RF/MICROWAVE FIXED ATTENUATOR |
| HMU-PAT-FH-K109 | RF/MICROWAVE FIXED ATTENUATOR |
| HMU-PAT-FH-K110 | RF/MICROWAVE FIXED ATTENUATOR |
| HMU-PAT-FH-K101 | RF/MICROWAVE FIXED ATTENUATOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMMC-5620 | 制造商:Agilent Technologies 功能描述:RF AMP MOD SGL GAIN AMP 20GHZ 7.5V - Gel-pak, waffle pack, wafer, diced wafer on film |
| HMMD47 | 制造商:SPRAGUE 功能描述:CAPACITOR SPRAGUE |
| HMM-HH | 制造商:Cooper Bussmann 功能描述: |
| HMMXS10 | 制造商:Sprague/Vishay 功能描述:CD310X0075 |
| HMN12816D | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。