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參數(shù)資料
| 型號： | HMMC-5618 |
| 元件分類： | 放大器 |
| 英文描述： | 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 72K |
| 代理商： | HMMC-5618 |
2
HMMC-5618 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
VD1, VD2
Drain Supply Voltage
V
3.0
5.0
5.5
ID1
Stage-One Drain Supply Current
mA
50
(VD1 = 5 V , VG1 = Open or Ground)
ID2
Stage-Two Drain Supply Current
mA
65
(VD2 = 5 V , VG2 = Open or Ground)
ID1 + ID2
Total Drain Supply Current
mA
115
140
(VD1 = VD2 = 5 V, VG1 = VG2 = Open or Ground)
VP1
Optional Input-Stage Gate Supply Pinch-off Voltage
V
-4
-2.8
(VD1 = 5 V , ID1 < 3 mA: Input Stage OFF
[2])
IG1
Gate Supply Current (Input Stage OFF[2])
mA
0.9
VP2
Optional Input-Stage Gate Supply Pinch-off Voltage
V
-7.5
-5.3
(VD2 = 5 V , ID2 < 3.6 mA: Output Stage OFF
[2])
IG2
Gate Supply Current (Output Stage OFF[2])
mA
1.7
(VD2 = 5 V , VG2 = Open or Ground)
θ
ch-bs
Thermal Resistance[3]
°C/Watt
87
(Channel-to-Backside at Tch = 150°C)
Tch
Channel Temperature[4] (TA = 100
°C, MTTF = 106 hrs,
°C
150
VD1 = VD2 = 5 V, VG1 = VG2 = Open)
Notes:
1. Backside ambient operating temperature TA = 25°C unless otherwise noted.
2. The specified FET stage is in the OFF state when biased with a gate voltage level that is sufficient to pinch off the drain
current.
3. Thermal resistance (in
°C/Watt) at a channel temperature T (°C) can be estimated using his equation:
θ(T) 87 x [T(°C)+273] / [150°C+ 273].
4. Derate MTTF by a factor of two for every 8
°C above T
ch.
HMMC-5618 RF Specifications, T
A = 25°C, VD1 = VD2 = 5 V, VG1 = VG2 = Open or Ground, ZO = 50
6– 18 GHz
5.9– 20 GHz
Symbol
Parameters and Test Conditions
Units
Typ.
Min.
Max.
Min.
Max.
Gain
Small Signal Gain
dB
14
12
11.5
Gain
Gain Flatness
dB
±0.5
S
21/ T
Temperature Coefficient of Gain
dB/
°C -0.025
(RLin)MIN
Minimum Input Return Loss
dB
12
10
9
(RL out)MIN
Minimum Output Return Loss
dB
12
10
Isolation
Reverse Isolation
dB
40
P-1dB
Output Power @ 1 dB Gain Compression
dBm
18
17
Psat
Saturated Output Power (Pin = 10 dBm)
dBm
20
18.5
NF
Noise Figure
dB
5.5
7
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