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參數(shù)資料
| 型號： | HMMC-5040 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 放大器 |
| 英文描述： | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0677 X 0.0299 INCH, 0.0056 INCH HEIGHT, DIE |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 650K |
| 代理商： | HMMC-5040 |
2
DC specifications/physical properties1
Symbol
Parameters/conditions
Minimum
Typical
Maximum
Units
V
D1,2-3-4
Drain supply operating voltages
2
4.5
5
Volts
I
D1
First stage drain supply current
55
mA
(V
DD = 4.5 V, VG1 =
~ –0.6 V)
I
D2-3-4
Total drain supply current for stage 2, 3, and 4
245
mA
(V
DD = 4.5 V, VGG =
~ –0.6 V)
V
G1,2,3-4
Gate supply operating voltages (I
DD =
~ 300 mA)
–0.6
Volts
V
P
Pinch-off voltage (V
DD = 4.5 V, IDD ≤ 10 mA)
–2
–1.2
–0.8
Volts
θch–bs
Thermal resistance2
62
°C/Watt
(channel-to-backside at T
ch = 160°C)
T
ch
Channel temperature3
160
°C
(T
A = 75°C, MTTF > 10
6 hrs, V
DD = 4.5 V, IDD = 300 mA)
1
Backside ambient operating temperature T
A = 25°C unless otherwise noted.
2
Thermal resistance (°C/Watt) at a channel temperature T (°C) can be estimated using the equation:
q(T) =
~ 62
[T(°C)+273] / [160°C+273].
3
Derate MTTF by a factor of two for every 8°C above T
ch.
RF specifications
(T
A = 25°C, Z0 = 50 , VDD = 4.5 V, IDD = 300 mA)
Broadband specifications
Narrow band performance
Symbol
Parameters/conditions
Minimum
Typical
Maximum
Typical
Units
BW
Operating bandwidth
21
20-44
40
21-24
27-29
37-40
GHz
Gain
Small signal gain
20
22
25
23
22
dB
Gain
Small signal gain flatness
±1.5
±1
±0.75
±0.3
dB
(RL
in)MIN
Minimum input return loss
8
10
9
10
14
dB
(RL
out)MIN
Minimum output return loss
8
10
11
12
dB
Isolation
Reverse isolation
54
dB
P
–1 dB
Output power at 1 dB gain
18
dBm
compression
P
SAT
Saturated output power at
20
21
dBm
3 dB gain compression
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