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參數(shù)資料
| 型號(hào)： | HMMC-5200 |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0161 X 0.0181 INCH, DIE |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 414K |
| 代理商： | HMMC-5200 |
HMMC-5200
DC–20 GHz HBT Series–Shunt Amplifier
Data Sheet
Description
The HMMC-5200 is a DC to 20 GHz, 9.5 dB gain, feedback
amplifier designed to be used as a cascadable gain block
for a variety of applications. The device consists of a
modified Darlington feedback pair which reduces the
sensitivity to process variations and provides 50 ohm
input/output port matches. Furthermore, this amplifier is
fabricated using MWTC’s Heterojunction Bipolar Transis-
tor (HBT) process which provides excellent process uni-
formity, reliability and 1/f noise performance. The device
requires a single positive supply voltage and generally
operates Class–A for good distortion performance.
Chip Size:
40 * 460mm (6. x 8. mils)
Chip Size Tolerance:
± 0 mm (± 0.4 mils)
Chip Thickness:
27 ± 5 mm (5.0 ± 0.6 mils)
Pad Dimensions:
70 * 70 mm (2.8 x 2.8 mils), or larger
Features
High Bandwidth, F-1dB:
21 GHz Typical
Moderate Gain:
9.5 dB ±1 dB @ 1.5 GHz
P-1dB @ 1.5 GHz: 12.5 dBm Typical
Low l/f Noise Corner:
<20 kHz Typical
Single Supply Operation
>4.75 volts @ 44 mA Typ.
Low Power Dissipation:
190 mW Typ. for chip
Symbol
Parameters/Conditions
Min.
Max.
Units
VCC
VDC Pad Voltage
8.0
Volts
VPAD
Output Pad Voltage
3.5
Volts
Pin
RF Input Power, Continuous
+6
dBm
TJ
Junction Temperature
+50
°C
Top
Operating Temperature
-55
+85
°C
Tst
Storage Temperature
-65
+65
°C
Tmax
Max. Assembly Temperature
+300
°C
Notes:
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