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參數(shù)資料
| 型號： | HMMC-5200 |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 0.0161 X 0.0181 INCH, DIE |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 414K |
| 代理商： | HMMC-5200 |
3
Applications
The HMMC-5200 can be used for a variety of applications
requiring moderate amounts of gain and low power dis-
sipation in a 50W system.
Biasing and Operation
The HMMC-5200 can be operated from a single positive
supply. This supply must be connected to two points on
the chip, namely the VCC pad and the output pad. The
supply voltage may be directly connected to the VCC
pad as long as the voltage is between +4.75 to +7 volts;
however, if the supply is higher than +7 volts, a series
resistor (RCC) should be used to reduce the voltage to the
VCC pad. See the bonding diagram for the equation used
to select RCC. In the case of the output pad, the supply
voltage must be connected to the output transmission
line through a resistor and an inductor. The required value
of the resistor is given by the equation:
Rout = 35.7Vsupply -114.3W,
where Vsupply is in volts. If ROUT is greater than 300W,
the inductor may be omitted, however, the amplifier’s
gain may be reduced by ~0.5 dB. Figure 4 shows a recom-
mended bonding strategy.
The chip contains a backside via to provide a low induc-
tance ground path; therefore, the ground pads on the IC
should not be bonded.
The voltage at the IN and OUT pads of the IC will be ap-
proximately 3.2 volts; therefore, DC blocking caps should
be used at these ports.
Assembly Techniques
It is recommended that the RF input and RF output con-
nections be made using 0.7 mil diameter gold wire. The
chip is designed to operate with 0.1–0.3 nH of inductance
at the RF input and output. This can be accomplished
by using 10 mil bond wire lengths on the RF input and
output. The bias supply wire can be a 0.7 mil diameter
gold wire attached to the VCC bonding pad.
GaAs MMICs are ESD sensitive. ESD preventive measures
must be employed in all aspects of storage, handling, and
assembly.
MMIC ESD precautions, handling considerations, die
attach and bonding methods are critical factors in suc-
cessful GaAs MMIC performance and reliability.
Agilent application note #54, “GaAs MMIC ESD, Die Attach
and Bonding Guidelines” provides basic information on
these subjects.
S 2
1,
(d
B)
S 1
2,
(d
B)
4
12
10
8
6
2
Frequency (GHz)
0.10
13
26
S12
S21
TA=25oC, VCC=+6V,
20
0
5
10
15
25
ROUT=100,Lin/out =0.17nH [1]
S 1
1,
(d
B)
S 2
2,
(d
B)
40
0
10
20
30
50
Frequency (GHz)
0.10
13
26
S22
S11
40
0
10
20
30
50
TA=25oC, VCC=+6V,
ROUT=100 , Lin/out =0.17nH [1]
Figure 3. Typical S11 and S22 Response
Figure 2. Typical S21 and S12 Response
Figure 1. Simplified Schematic Diagram
Out
In
Vcc
GND
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