參數(shù)資料
型號(hào): HGTP3N60B3D
廠商: INTERSIL CORP
元件分類: IGBT 晶體管
英文描述: 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述: 7 A, 600 V, N-CHANNEL IGBT, TO-220AB
文件頁(yè)數(shù): 6/7頁(yè)
文件大?。?/td> 154K
代理商: HGTP3N60B3D
6
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 18. RECOVERY TIME vs FORWARD CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
100
C
C
IES
C
OES
200
300
400
500
FREQUENCY = 1MHz
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.05
0.2
0.1
0.02
0.01
I
E
,
V
EC
, FORWARD VOLTAGE (V)
3.0
2.0
2.5
1.5
1.0
0.5
0
0
3
6
9
12
15
150
o
C
-55
o
C
25
o
C
30
25
20
15
0
t
I
EC
, FORWARD CURRENT (A)
1
4
t
rr
T
C
= 25
o
C, dI
EC
/dt = 200A/
μ
s
0.5
t
b
5
10
t
a
2
3
HGTP3N60B3D, HGT1S3N60B3DS
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