參數(shù)資料
型號： HGTP3N60B3D
廠商： INTERSIL CORP
元件分類： IGBT 晶體管
英文描述： 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述： 7 A, 600 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù)： 2/7頁
文件大?。?/td> 154K
代理商： HGTP3N60B3D
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP3N60B3D,
HGT1S3N60B3DS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C110
Average Diode Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
EC(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
Short Circuit Withstand Time (Note 2) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
600
V
7.0
A
3.5
A
4.0
20
A
±
20
±
30
V
V
18A at 600V
33.3
W
0.27
W/
o
C
o
C
-55 to 150
300
260
o
C
o
C
5
μ
s
μ
s
10
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 82
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
250
μ
A
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
-
1.8
2.1
V
-
2.1
2.5
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 250
μ
A, V
CE
= V
GE
4.5
5.4
6.0
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 82
,
V
GE
= 15V
L = 500
μ
H, V
CE
= 600V
-
-
±
250
nA
Switching SOA
SSOA
18
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= I
C110
, V
CE
= 0.5 BV
CES
-
7.9
-
V
On-State Gate Charge
Q
g(ON)
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
18
22
nC
V
GE
= 20V
-
21
25
nC
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 1mH
Test Circuit (Figure 19)
-
18
-
ns
Current Rise Time
t
rI
-
16
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
105
-
ns
Current Fall Time
t
fI
-
70
-
ns
Turn-On Energy
E
ON
-
66
75
μ
J
Turn-Off Energy (Note 1)
E
OFF
-
88
160
μ
J
HGTP3N60B3D, HGT1S3N60B3DS
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