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參數(shù)資料
| 型號(hào)： | HGTP3N60B3D |
| 廠商： | INTERSIL CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 7 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | HGTP3N60B3D |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
2
4
6
1
100
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE
= 480V
3
5
7
200
T
C
75
o
C
75
o
C
V
GE
15V
10V
110
o
C
10V
15V
110
o
C
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
JC
= 3.75
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
4
6
8
10
14
16
12
15
20
25
30
35
40
45
t
SC
I
SC
V
CE
= 360V, R
G
= 82
, T
J
= 125
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
6
8
6
7
8
9
10
14
12
10
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
0
1
2
3
4
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
25
10
15
20
5
6
7
8
9
10
5
30
E
O
,
0.5
0.3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0.4
0.2
0.1
0
8
5
2
3
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
V
GE
= 15V, T
J
= 150
o
C, T
J
= 25
o
C
7
6
4
1
0.6
0.7
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0.1
0.2
0.3
0.4
0
8
6
4
2
3
5
7
1
0.5
0.6
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C; V
GE
= 10V OR 15V
T
J
= 25
o
C; V
GE
= 10V OR 15V
HGTP3N60B3D, HGT1S3N60B3DS
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