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參數(shù)資料
| 型號： | HGT1S3N60B3DS |
| 廠商： | INTERSIL CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 7 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 154K |
| 代理商： | HGT1S3N60B3DS |
1
File Number
4414.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
HGTP3N60B3D, HGT1S3N60B3DS
7A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25
o
C and
150
o
C. The diode used in anti-parallel with the IGBT is the
RHRD460. The IGBT used is TA49192.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49193.
Symbol
Features
7A, 600V T
C
= 25
o
C
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 115ns at T
J
= 125
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Related Literature
TB334 “Guidelines for Soldering Surface Mount
- Components to PC Boards
Packaging
JEDEC TO-220AB
TO-263, TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP3N60B3D
TO-220AB
G3N60B3D
HGT1S3N60B3DS
TO-263AB
G3N60B3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60B3DS9A.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP5N120 | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGTP5N120CNS | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP5N120CNS9A | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGT1S5N120BNDS | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTG5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S3N60B3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB |
| HGT1S3N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S3N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB |
| HGT1S3N60C3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S3N60C3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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