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| 型號(hào)： | HGT1S3N60B3DS |
| 廠商： | INTERSIL CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 7 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | HGT1S3N60B3DS |
7
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no
damage problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5.
Gate Voltage Rating
- Never exceed the gate-voltage
rating of V
GEM
. Exceeding the rated V
GE
can result in
permanent damage to the oxide layer in the gate region.
6.
Gate Termination
- The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7.
Gate Protection
- These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
CE
) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
MAX1
or f
MAX2
; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t
d(ON)I
are defined in Figure 20.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JM
. t
d(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON
). The
allowable dissipation (P
D
) is defined by P
D
= (T
JM
- T
C
)/R
θ
JC
.
The sum of device switching and conduction losses must
not exceed P
D
. A 50% duty factor was used (Figure 3) and
the conduction losses (P
C
) are approximated by
P
C
= V
CE
x I
CE
)/2.
E
ON
and E
OFF
are defined in the switching waveforms
shown in Figure 20. E
ON
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-on and E
OFF
is the
integral of the instantaneous power loss (I
CE
x V
CE
) during
turn-off. All tail losses are included in the calculation for
E
OFF
; i.e., the collector current equals zero (I
CE
= 0).
Test Circuit and Waveforms
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 20. SWITCHING TEST WAVEFORMS
R
G
= 82
L = 1mH
V
DD
= 480V
+
-
DUT
HGTP3N60B3D
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGTP3N60B3D, HGT1S3N60B3DS
ECCOSORBD
is a Trademark of Emerson and Cumming, Inc.
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| HGTP5N120CNS | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGTP5N120CNS9A | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-263AB |
| HGT1S5N120BNDS | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
| HGTG5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N溝道絕緣柵雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S3N60B3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB |
| HGT1S3N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S3N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB |
| HGT1S3N60C3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S3N60C3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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