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參數(shù)資料
| 型號(hào)： | HGTP3N60B3D |
| 廠商： | INTERSIL CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 7 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 154K |
| 代理商： | HGTP3N60B3D |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 82
L = 1mH
Test Circuit (Figure 19)
-
16
-
ns
Current Rise Time
t
rI
-
18
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
220
295
ns
Current Fall Time
t
fI
-
115
175
ns
Turn-On Energy
E
ON
-
130
140
μ
J
Turn-Off Energy (Note 1)
E
OFF
-
210
325
μ
J
Diode Forward Voltage
V
EC
I
EC
= 3A
-
2.0
2.5
V
Diode Reverse Recovery Time
t
rr
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
-
-
22
ns
I
EC
= 3A, dI
EC
/dt = 200A/
μ
s
-
-
28
ns
Thermal Resistance Junction To Case
R
θ
JC
IGBT
-
-
3.75
o
C/W
Diode
3.0
o
C/W
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
25
50
75
100
125
150
1
0
3
5
2
4
6
7
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
700
6
0
I
C
,
2
4
300
400
200
100
500
600
8
0
12
14
16
18
20
T
J
= 150
o
C, R
G
= 82
, V
GE
= 15V L = 500
μ
H
HGTP3N60B3D, HGT1S3N60B3DS
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