參數(shù)資料
型號(hào): HGTD3N60A4
廠商: Fairchild Semiconductor Corporation
英文描述: 600V, SMPS Series N-Channel IGBT
中文描述: 600V的,開(kāi)關(guān)電源系列N溝道IGBT的
文件頁(yè)數(shù): 8/9頁(yè)
文件大?。?/td> 227K
代理商: HGTD3N60A4
8
HGTD3N60C3, HGTD3N60C3S
TO-252AA
SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE
LEAD 1
-
GATE
LEAD 3
-
EMITTER
TERM. 4
-
COLLECTOR
b
2
E
D
L
3
L
e
b
1
b
1
3
A
L
c
SEATING
PLANE
BACK VIEW
2
H
1
A
1
b
3
e
1
J
1
L
1
TERM. 4
0.265
(6.7)
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
0.265 (6.7)
0.070 (1.8)
0.118 (3.0)
0.063 (1.6)
0.090 (2.3)
0.063 (1.6)
0.090 (2.3)
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.086
0.094
2.19
2.38
-
A
1
b
0.018
0.022
0.46
0.55
4, 5
0.028
0.032
0.72
0.81
4, 5
b
1
b
2
b
3
c
0.033
0.040
0.84
1.01
4
0.205
0.215
5.21
5.46
4, 5
0.190
-
4.83
-
2
0.018
0.022
0.46
0.55
4, 5
D
0.270
0.290
6.86
7.36
-
E
0.250
0.265
6.35
6.73
-
e
0.090 TYP
2.28 TYP
7
e
1
H
1
J
1
L
0.180 BSC
4.57 BSC
7
0.035
0.045
0.89
1.14
-
0.040
0.045
1.02
1.14
-
0.100
0.115
2.54
2.92
-
L
1
L
2
L
3
0.020
-
0.51
-
4, 6
0.025
0.040
0.64
1.01
3
0.170
-
4.32
-
2
NOTES:
1. These dimensions are within allowable dimensions of Rev. B of
JEDEC TO-252AA outline dated 9-88.
2. L
3
and b
3
dimensions establish a minimum mounting surface for
terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L
1
is the terminal length for soldering.
7. Position of lead to be measured 0.090 inches (2.28mm) from bottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 6 dated 10-96.
相關(guān)PDF資料
PDF描述
HGTD3N60A4S OSCILLATORS 100PPM 0+70 3.3V 4 4.000MHZ TS HCMOS 5X7MM 4PAD SMD
HGTG12N60C3D 36 MACROCELL 3.3 VOLT ISP CPLD
HGTG12N60C3D 24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
HGTG40N6 70A, 600V, UFS Series N-Channel IGBT
HGTG40N60B3 70A, 600V, UFS Series N-Channel IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTD3N60A4S 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTD3N60A4S9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA
hgtd3n60b3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTD3N60B3S 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTD3N60B3S9A 制造商:Rochester Electronics LLC 功能描述:- Bulk