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參數(shù)資料
| 型號： | HGTG12N60C3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 102K |
| 代理商： | HGTG12N60C3D |
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
3-35
S E M I C O N D U C T O R
HGTG12N60C3D
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
January 1997
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG12N60C3D
600
UNITS
V
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C110
Average Diode Forward Current at 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
GE
= 25
.
24
12
15
96
±
20
±
30
A
A
A
A
V
V
24A at 600V
104
0.83
-40 to 150
260
4
13
W
W/
o
C
o
C
o
C
μ
s
μ
s
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,587,713
4,598,461
4,605,948
4,618,872
4,641,162
4,644,637
4,682,195
4,684,413
4,794,432
4,801,986
4,803,533
4,809,045
4,860,080
4,883,767
4,888,627
4,890,143
4,969,027
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
Package
JEDEC STYLE TO-247
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
E
G
C
G
E
Features
24A, 600V at T
C
= 25
o
C
Typical Fall Time . . . . . . . . . . . . . . 210ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
Description
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between 25
o
C and 150
o
C. The IGBT used is the development
type TA49123. The diode used in antiparallel with the IGBT is
the development type TA49061.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
PACKAGING AVAILABILITY
Formerly Developmental Type TA49117.
PART NUMBER
HGTG12N60C3D
NOTE: When ordering, use the entire part number.
PACKAGE
TO-247
BRAND
G12N60C3D
File Number
4043.1
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| HGTG12N60C3DR | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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