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參數(shù)資料
| 型號： | HGTG40N60B3 |
| 廠商： | Harris Corporation |
| 英文描述： | 70A, 600V, UFS Series N-Channel IGBT |
| 中文描述： | 第70A，600V的，的ufs系列N溝道IGBT的 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | HGTG40N60B3 |
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1995
9-3
S E M I C O N D U C T O R
HGTG40N60B3
70A, 600V, UFS Series N-Channel IGBT
Package
JEDEC STYLE TO-247
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
E
C
G
C
E
G
Features
70A, 600V at T
C
= +25
o
C
Square Switching SOA Capability
Typical Fall Time - 160ns at +150
o
C
Short Circuit Rating
Low Conduction Loss
Description
The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
o
C and +150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49052
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG40N60B3
TO-247
G40N60B3
NOTE: When ordering, use the entire part number.
PRELIMINARY
May 1995
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTG40N60B3
600
600
UNITS
V
V
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Voltage, R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
Collector Current Continuous
At T
C
= +25
o
C (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= +110
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
C
= +150
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . t
SC
70
40
330
±
20
±
30
A
A
A
V
V
160A at 0.8 BV
CES
290
2.33
-40 to +150
260
2
10
W
W/
o
C
o
C
o
C
μ
s
μ
s
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
C
= +125
o
C, R
GE
= 25
.
File Number
3943
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG40N60B3 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT IC |
| HGTG40N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG40N60B3_Q | 功能描述:IGBT 晶體管 600V N-Channel IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG40N60B3R4729 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTG40N60C3 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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