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參數(shù)資料
| 型號(hào)： | HGTG12N60C3D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大小： | 102K |
| 代理商： | HGTG12N60C3D |
All Harris Semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call
1-800-4-HARRIS
UNITED STATES
Harris Semiconductor
P. O. Box 883, Mail Stop 53-210
Melbourne, FL 32902
TEL: 1-800-442-7747
(407) 729-4984
FAX: (407) 729-5321
EUROPE
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
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Cencon 1, #09-01
Singapore 1334
TEL: (65) 748-4200
FAX: (65) 748-0400
S E M I C O N D U C T O R
3-41
HGTG12N60C3D
Operating Frequency Information
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I
CE
) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows f
MAX1
or
f
MAX2
whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on-state time for a 50% duty factor. Other definitions are
possible. t
D(OFF)I
and t
D(ON)I
are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
JMAX
. t
D(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON
). The
allowable dissipation (P
D
) is defined by P
D
= (T
JMAX
- T
C
)/
R
θ
JC
. The sum of device switching and conduction losses
must not exceed P
D
. A 50% duty factor was used (Figure
13) and the conduction losses (P
C
) are approximated by
P
C
= (V
CE
x I
CE
)/2.
E
ON
and E
OFF
are defined in the switching waveforms
shown in Figure 21. E
ON
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-on and E
OFF
is the inte-
gral of the instantaneous power loss during turn-off. All tail
losses are included in the calculation for E
OFF
; i.e. the col-
lector current equals zero (I
CE
= 0).
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBT’s are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBT’s can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD
LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means, for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5.
Gate Voltage Rating
- Never exceed the gate-voltage rat-
ing of V
GEM
. Exceeding the rated V
GE
can result in
permanent damage to the oxide layer in the gate region.
6.
Gate Termination
- The gates of these devices are essen-
tially capacitors. Circuits that leave the gate open-circuited
or floating should be avoided. These conditions can result
in turn-on of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7.
Gate Protection
- These devices do not have an internal
monolithic Zener Diode from gate to emitter. If gate pro-
tection is required an external Zener is recommended.
ECCOSORBD
is a Trademark of Emerson and Cumming, Inc.
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