參數(shù)資料
型號(hào): HGTD3N60A4
廠商: Fairchild Semiconductor Corporation
英文描述: 600V, SMPS Series N-Channel IGBT
中文描述: 600V的,開(kāi)關(guān)電源系列N溝道IGBT的
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 227K
代理商: HGTD3N60A4
4
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
Typical Performance Curves
(Continued)
t
d
,
3
1
2
3
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
5
6
10
V
GE
= 15V
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
500
400
300
200
V
GE
= 10V
V
GE
= 15V
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
5
10
80
1
2
3
4
5
6
7
8
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
V
GE
= 10V OR 15V
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
300
200
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
E
O
,
0.1
0.2
0.3
0.4
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.5
V
GE
= 10V
V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0.1
0.2
0.3
0.4
0.5
0.6
0
T
J
= 150
o
C, R
G
= 82
, L = 1mH, V
CE(PK)
= 480V
1
2
3
4
5
6
7
8
0.8
0.7
V
GE
= 10V or 15V
HGTD3N60C3, HGTD3N60C3S
相關(guān)PDF資料
PDF描述
HGTD3N60A4S OSCILLATORS 100PPM 0+70 3.3V 4 4.000MHZ TS HCMOS 5X7MM 4PAD SMD
HGTG12N60C3D 36 MACROCELL 3.3 VOLT ISP CPLD
HGTG12N60C3D 24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
HGTG40N6 70A, 600V, UFS Series N-Channel IGBT
HGTG40N60B3 70A, 600V, UFS Series N-Channel IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTD3N60A4S 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTD3N60A4S9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA
hgtd3n60b3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTD3N60B3S 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTD3N60B3S9A 制造商:Rochester Electronics LLC 功能描述:- Bulk