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參數(shù)資料
| 型號： | HGTD3N60A4 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 600V, SMPS Series N-Channel IGBT |
| 中文描述： | 600V的，開關(guān)電源系列N溝道IGBT的 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 227K |
| 代理商： | HGTD3N60A4 |
7
HGTD3N60C3, HGTD3N60C3S
TO-251AA
3 LEAD JEDEC TO-251AA PLASTIC PACKAGE
LEAD 1
-
GATE
LEAD 2
-
COLLECTOR
LEAD 3
-
EMITTER
TERM. 4
-
COLLECTOR
b
2
E
A
c
SEATING
PLANE
L
1
D
L
b
e
1
2
3
b
1
H
1
J
1
A
1
e
1
TERM. 4
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.086
0.094
2.19
2.38
-
A
1
b
0.018
0.022
0.46
0.55
3, 4
0.028
0.032
0.72
0.81
3, 4
b
1
b
2
c
0.033
0.040
0.84
1.01
3
0.205
0.215
5.21
5.46
3, 4
0.018
0.022
0.46
0.55
3, 4
D
0.270
0.290
6.86
7.36
-
E
0.250
0.265
6.35
6.73
-
e
0.090 TYP
2.28 TYP
5
e
1
H
1
J
1
L
0.180 BSC
4.57 BSC
5
0.035
0.045
0.89
1.14
-
0.040
0.045
1.02
1.14
6
0.355
0.375
9.02
9.52
-
L
1
0.075
0.090
1.91
2.28
2
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-251AA outline dated 9-88.
2. Solder finish uncontrolled in this area.
3. Dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 2 dated 10-95.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTD3N60A4S | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTD3N60A4S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA |
| hgtd3n60b3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD3N60B3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTD3N60B3S9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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