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| 型號(hào)： | HCPL-316J |
| 英文描述： | 2.0 Amp Gate Drive Optocoupler with Integrated (V CE ) Desaturation Detection and Fault Status Feedback(帶集成不飽和檢測(cè)和誤差反饋的2.0 Amp門驅(qū)動(dòng)耦合器) |
| 中文描述： | 2.0安培門極驅(qū)動(dòng)光電耦合器與集成（五長(zhǎng)官）飽和檢測(cè)與故障狀態(tài)反饋（帶集成不飽和檢測(cè)和誤差反饋的2.0安培門驅(qū)動(dòng)耦合器） |
| 文件頁(yè)數(shù)： | 29/32頁(yè) |
| 文件大?。?/td> | 503K |
| 代理商： | HCPL-316J |
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29
(Average switching
energy
supplied to HCPL-316J per
cycle vs. R
G
plot);
3. Compare the input and output
power dissipation calculated in
step #2 to the maximum
recommended dissipation for
the HCPL-316J. (If the
maximum recommended level
has been exceeded, it may be
necessary to raise the value of
R
G
to lower the switching
power and repeat step #2.)
As an example,
the total input
and output power dissipation can
be calculated given the following
conditions:
I
ON, MAX
~ 2.0 A
V
CC2
= 18 V
V
EE
= -5 V
f
CARRIER
= 15 kHz
Step 1
:
Calculate R
G
minimum
from I
OL
peak specification:
To find the peak charging l
OL
assume that the gate is initially
charged the steady-state value of
V
EE
. Therefore apply the
following relationship:
R
G
=
[V
OH
@650
μ
A – (V
OL
+V
EE
)]
I
OL,PEAK
= [V
CC2
– 1 – (V
OL
+ V
EE
)]
I
OL,PEAK
18 V – 1 V – (1.5 V + (-5 V))
2.0 A
= 10.25
≈
10.5
(for a 1% resistor)
(Note from Figure 76 that the
real value of I
OL
may vary from
the value calculated from the
simple model shown.)
Step 2
: Calculate total power
dissipation in the HCPL-316J:
Figure 76. Typical Peak I
ON
and I
OFF
Currents vs. Rg (for HCPL-316J
Output Driving an IGBT Rated at
600 V/100 A.
Figure 77. Switching Energy Plot for
Calculating Average Pswitch (for
HCPL-316J Output Driving an IGBT
Rated at 600 V/100 A).
E
0
0
Rg (
)
200
8
5
9
50
100
3
150
1
4
7
Ess (Qg = 650 nC)
6
2
SWITCHING ENERGY vs. GATE RESISTANCE
(V
CC2
/ V
EE2
= 25 V / 5 V
I
O
,
O
0
-3
Rg (
)
200
3
1
4
20
100
-1
140
-2
0
2
I
OFF
(MAX.)
MAX. I
ON
,
I
OFF
vs. GATE RESISTANCE
(V
CC2
EE2
= 25 V / 5 V
40 60 80
120
160180
I
ON
(MAX.)
The HCPL-316J total power
dissipation (P
T
) is equal to the
sum of the input-side power (P
I
)
and output-side power (P
O
):
P
T
= P
I
+ P
O
P
I
= I
CC1
* V
CC1
P
O
= P
O(BIAS)
+ P
O,SWTICH
= I
CC2
* (V
CC2
–V
EE
) +
E
SWITCH
* f
SWITCH
where,
P
O(BIAS)
= steady-state power
dissipation in the HCPL-316J
due to biasing the device.
P
O(SWITCH)
= transient power
dissipation in the HCPL-316J
due to charging and discharging
power device gate.
E
SWITCH
= Average Energy
dissipated in HCPL-316J due to
switching of the power device
over one switching cycle
(
μ
J/cycle).
f
SWITCH
= average carrier signal
frequency.
For R
G
= 10.5, the value read
from Figure 77 is E
SWITCH
=
6.05
μ
J. Assume a worst-case
average I
CC1
= 16.5 mA (which is
given by the average of I
CC1H
and
I
CC1L
). Similarly the average
I
CC2
= 5.5 mA.
P
I
= 16.5 mA * 5.5 V = 90.8 mW
P
O
= P
O(BIAS)
+ P
O,SWITCH
= 5.5 mA * (18 V – (–5 V)) +
6.051
μ
J * 15 kHz
= 126.5 mW + 90.8 mW
= 217.3 mW
Step 3
: Compare the
calculated power dissipation
with the absolute maximum
values for the HCPL-316J:
For the example,
P
I
= 90.8 mW < 150 mW
(abs. max.)
é
OK
P
O
= 217.3 mW < 400 mW
(abs. max.)
é
OK
Therefore, the power dissipation
absolute maximum rating has not
been exceeded for the example.
Please refer to the following
Thermal Model
section for an
explanation on how to calculate
the maximum junction
temperature of the HCPL-316J
for a given PC board layout
configuration.
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|---|---|
| HCPL-316J#500 | 功能描述:邏輯輸出光電耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時(shí)間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
| HCPL-316J-000E | 功能描述:邏輯輸出光電耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時(shí)間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
| HCPL-316J-000E | 制造商:Avago Technologies 功能描述:GATE DRIVE OPTOCOUPLERLF - LEAD FREE VE |
| HCPL-316J-500E | 功能描述:邏輯輸出光電耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時(shí)間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
| HCPL-3180 | 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube |
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