參數(shù)資料
型號： HCPL-316J
英文描述： 2.0 Amp Gate Drive Optocoupler with Integrated (V CE ) Desaturation Detection and Fault Status Feedback(帶集成不飽和檢測和誤差反饋的2.0 Amp門驅(qū)動耦合器)
中文描述： 2.0安培門極驅(qū)動光電耦合器與集成（五長官）飽和檢測與故障狀態(tài)反饋（帶集成不飽和檢測和誤差反饋的2.0安培門驅(qū)動耦合器）
文件頁數(shù)： 28/32頁
文件大?。?/td> 503K
代理商： HCPL-316J
28
Figure 75. Current Buffer for Increased Drive Current.
Power/Layout
Considerations
Operating Within the
Maximum Allowable Power
Ratings (Adjusting Value of
R
G
):
When choosing the value of R
G
,
it is important to confirm that the
power dissipation of the
HCPL-316J is within the
maximum allowable power
rating.
The steps for doing this are:
1. Calculate the minimum desired
R
G
;
2. Calculate total power
dissipation in the part
referring to Figure 77.
Figure 74. Use of R
C
to Further Limit
I
ON,PEAK
.
Higher Output Current Using
an External Current Buffer:
To increase the IGBT gate drive
current, a non-inverting current
buffer (such as the npn/pnp
buffer shown in Figure 75) may
be used. Inverting types are not
compatible with the desaturation
fault protection circuitry and
should be avoided. To preserve
the slow IGBT turn-off feature
during a fault condition, a 10 nF
capacitor should be connected
from the buffer input to V
EE
and
a 10
resistor inserted between
the output and the common npn/
pnp base. The MJD44H11 /
MJD45H11 pair is appropriate
for currents up to 8A maximum.
The D44VH10 / D45VH10 pair is
appropriate for currents up to 15
A maximum.
DESAT Diode and DESAT
Threshold
The DESAT diode’s function is to
conduct forward current,
16
15
14
13
12
11
10
9
V
E
V
LED2+
DESAT
V
CC2
V
C
V
OUT
V
EE
V
EE
10
HCPL-316J
100 pF
R
C
8
10 nF
-5 V
15 V
allowing sensing of the IGBT’s
saturated collector-to-emitter
voltage, V
CESAT
, (when the IGBT
is “on”) and to block high
voltages (when the IGBT is “off”).
During the short period of time
when the IGBT is switching, there
is commonly a very high dV
CE
/dt
voltage ramp rate across the
IGBT’s collector-to-emitter. This
results in I
CHARGE
(= C
D-DESAT
x
dV
CE
/dt) charging current which
will charge the blanking
capacitor, C
BLANK
. In order to
minimize this charging current
and avoid false DESAT triggering,
it is best to use fast response
diodes. Listed in the below table
are fast-recovery diodes that are
suitable for use as a DESAT diode
(D
DESAT
). In the recommended
application circuit shown in
Figure 62, the voltage on pin 14
(DESAT) is V
DESAT
= V
F
+ V
CE
,
(where V
F
is the forward ON
voltage of D
DESAT
and V
CE
is the
IGBT collector-to-emitter
voltage). The value of V
CE
which
triggers DESAT to signal a
FAULT condition, is nominally 7V
– V
F
. If desired, this DESAT
threshold voltage can be
decreased by using multiple
DESAT diodes in series. If
n
is
the number of DESAT diodes
then the nominal threshold value
becomes V
CE,FAULT(TH)
= 7 V –
n
x V
F
. In the case of using two
diodes instead of one, diodes with
half of the total required
maximum reverse-voltage rating
may be chosen.
Max. Reverse Voltage
Rating, V
RRM
(Volts)
1000
600
1000
1000
1000
600
Part Number
MUR1100E
MURS160T3
UF4007
BYM26E
BYV26E
BYV99
Manufacturer
Motorola
Motorola
General Semi.
Philips
Philips
Philips
t
rr
(ns)
75
75
75
75
75
75
Package Type
59-04 (axial leaded)
Case 403A (surface mount)
DO-204AL (axial leaded)
SOD64 (axial leaded)
SOD57 (axial leaded)
SOD87 (surface mount)
16
15
14
13
12
11
10
9
V
E
V
LED2+
DESAT
V
CC2
V
C
V
OUT
V
EE
V
EE
10
HCPL-316J
100 pF
10 nF
MJD44H11 or
D44VH10
4.5
2.5
MJD45H11 or
D45VH10
15 V
-5 V
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相關代理商/技術參數(shù)
參數(shù)描述
HCPL-316J#500 功能描述:邏輯輸出光電耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube
HCPL-316J-000E 功能描述:邏輯輸出光電耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube
HCPL-316J-000E 制造商:Avago Technologies 功能描述:GATE DRIVE OPTOCOUPLERLF - LEAD FREE VE
HCPL-316J-500E 功能描述:邏輯輸出光電耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube
HCPL-3180 功能描述:高速光耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Avago Technologies 電流傳遞比: 最大波特率: 最大正向二極管電壓:1.75 V 最大反向二極管電壓:5 V 最大功率耗散:40 mW 最大工作溫度:+125 C 最小工作溫度:- 40 C 封裝 / 箱體:SOIC-5 封裝:Tube
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