參數(shù)資料
型號: HB52E168EN
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁數(shù): 2/64頁
文件大?。?/td> 2741K
代理商: HB52E168EN
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
2
168-pin socket type package (dual lead out)
— Outline: 133.37 mm (Length)
×
34.925 mm (Height)
×
4.00 mm (Thickness)
— Lead pitch: 1.27 mm
3.3 V power supply
Clock frequency: 100 MHz (max)
LVTTL interface
Data bus width
×
64 Non parity (HB52E88EM/HB52E168EN)
×
72 ECC (HB52E89EM/HB52E169EN)
Single pulsed RAS
4 Banks can operates simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8/full page
2 variations of burst sequence
— Sequential
— Interleave
Programmable CE latency: 2/3 (HB52E88EM/52E89EM/52E168EN/52E169EN-A6F)
: 3 (HB52E88EM/52E89EM/52E168EN/52E169EN-B6F)
Byte control by DQMB
Refresh cycles: 4096 refresh cycles/64 ms
2 variations of refresh
— Auto refresh
— Self refresh
Full page burst length capability
— Sequential burst
— Burst stop capability
Ordering Information
Type No.
HB52E88EM-A6F
HB52E88EM-B6F
HB52E89EM-A6F
HB52E89EM-B6F
HB52E168EN-A6F
HB52E168EN-B6F
HB52E169EN-A6F
HB52E169EN-B6F
Frequency
100 Mhz
100 Mhz
100 Mhz
100 Mhz
100 Mhz
100 Mhz
100 Mhz
100 Mhz
CE latency
2/3
3
2/3
3
2/3
3
2/3
3
Package
168-pin dual lead out socket type
Contact pad
Gold
相關PDF資料
PDF描述
HB52E169EN 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E88EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E89EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E169E12 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
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