參數(shù)資料
型號(hào): HB52E168EN
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無(wú)緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 15/64頁(yè)
文件大小: 2741K
代理商: HB52E168EN
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
15
Absolute Maximum Ratings
Note: 1. Respect to V
SS
DC Operating Conditions (Ta = 0 to +65
°
C)
Notes: 1. All voltage referred to V
SS
2. The supply voltage with all VCC pins must be on the same level.
3. The supply voltage with all VSS pins must be on the same level.
4. CK, CKE, S, DQMB, DQ pins: V
IH
(max) = V
CC
+ 0.5 V for pulse width
5 ns at V
CC
.
5. Others: V
IH
(max) = 4.6 V for pulse width
5 ns at V
CC
.
6. V
IL
(min) = –1.0 V for pulse width
5 ns at V
SS
.
V
IL
/V
IH
Clamp (Component characteristic)
This SDRAM component has V
IL
and V
IH
clamp for CK, CKE, S, DQMB and DQ pins.
Minimum V
IL
Clamp Current
Parameter
Voltage on any pin relative to V
SS
Symbol
V
T
Value
–0.5 to V
CC
+ 0.5
(
4.6 (max))
–0.5 to +4.6
50
8.0
Unit
V
Note
1
Supply voltage relative to V
SS
Short circuit output current
Power dissipation (HB52E88EM/
168EN)
Power dissipation (HB52E89EM/
169EN)
Operating temperature
Storage temperature
V
CC
Iout
P
T
V
mA
W
1
P
T
9.0
W
Topr
Tstg
0 to +65
–55 to +125
°
C
°
C
Parameter
Supply voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
–0.3
Max
3.6
0
V
CC
+ 0.3
0.8
Unit
V
V
V
V
Notes
1, 2
3
1, 4, 5
1, 6
Input high voltage
Input low voltage
V
IL
(V)
–2
–1.8
–1.6
–1.4
–1.2
–1
–0.9
–0.8
–0.6
I (mA)
–32
–25
–19
–13
–8
–4
–2
–0.6
0
相關(guān)PDF資料
PDF描述
HB52E169EN 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
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