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參數(shù)資料
| 型號： | HAT3006R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel / P Channel Power MOS FET(N/P溝道MOEFET) |
| 中文描述： | 硅?頻道/ P通道功率MOS FET（N / P系列溝道MOEFET） |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 234K |
| 代理商： | HAT3006R |
HAT3006R
9
Main Characteristics (P channel)
0
10000
3000
1000
300
100
30
10
–10
–20
–30
–40
–50
V = 0
f = 1 MHz
0
–10
–20
–30
–40
0
0
–4
–8
–12
–16
–20
40
–50
8
16
24
32
500
200
100
20
50
10
5
–0.1
Ciss
Coss
Crss
DS
V
GS
V
V = –5 V
–10 V
–25 V
V = –25 V
–10 V
–5 V
I = –4.5 A
–0.2
–0.5
–1
–2
–5
–10
V = –4 V, V = –10 V
PW = 3 μs, duty < 1 %
tf
r
d(off)
t
d(on)
t
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
–20
–16
–12
–8
–4
0
–0.4
–0.8
–1.2
–1.6
–2.0
0, 5 V
V = –5 V
Source to Drain Voltage V (V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
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| HAT3006R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel / P Channel Power MOS FET High Speed Power Switching |
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| HAT3008R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N / P Channel Power MOS FET High Speed Power Switching |
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