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參數(shù)資料
| 型號： | HAT3006R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel / P Channel Power MOS FET(N/P溝道MOEFET) |
| 中文描述： | 硅?頻道/ P通道功率MOS FET（N / P系列溝道MOEFET） |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 234K |
| 代理商： | HAT3006R |
HAT3006R
7
Main Characteristics (P channel)
–0.1
–100
–10
–1
–0.1
–0.01
–0.3
–1
–3
–10
–30
–100
–30
–3
–0.3
–0.03
10 μs
100 μs
PW=10ms
Noe5
1ms
–20
–16
–12
–8
–4
0
–2
–4
–6
–8
–10
–10 V
–4 V
–20
–16
–12
–8
–4
0
–1
–2
–3
–4
–5
–2.5 V
V = –2 V
–3.5 V
–5 V
–8 V
–6 V
–4.5 V
–3 V
Tc = 75 °C
–25 °C
25 °C
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
V = –10 V
Pulse Test
Note 5 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
limited by R
DS(on)
Operation in
this area is
Ta = 25 °C
1 shot Pulse
1 Drive Operation
–0.5
–0.4
–0.3
–0.2
–0.1
0
–2
–4
–6
–8
–10
–0.5 A
I = –2 A
–1 A
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Pulse Test
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PDF描述 |
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| HAT3008R | Silicon N/P Channel Power MOS FET High Speed Power Switching |
| HAT3008RJ | Silicon N/P Channel Power MOS FET High Speed Power Switching |
| HAX1000-S | Current Transducers HAX 500 to 2500-S |
| HAX1200-S | Current Transducers HAX 500 to 2500-S |
| HAX1500-S | Current Transducers HAX 500 to 2500-S |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HAT3006R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel / P Channel Power MOS FET High Speed Power Switching |
| HAT3008R | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N/P Channel Power MOS FET High Speed Power Switching |
| HAT3008R_09 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N / P Channel Power MOS FET High Speed Power Switching |
| HAT3008R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N / P Channel Power MOS FET High Speed Power Switching |
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