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參數(shù)資料
| 型號： | HAT3006R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel / P Channel Power MOS FET(N/P溝道MOEFET) |
| 中文描述： | 硅?頻道/ P通道功率MOS FET（N / P系列溝道MOEFET） |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 234K |
| 代理商： | HAT3006R |
HAT3006R
4
Main Characteristics (N channel)
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
10 μs
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
100
100 μs
1ms
PW=10ms
20
16
12
8
4
0
2
4
6
8
10
10 V
6 V
3 V
4.5 V
3.5 V
V = 2.5 V
4 V
5 V
20
16
12
8
4
0
1
2
3
4
5
Tc = –25 °C
75 °C
25 °C
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = 10 V
Pulse Test
Noe5
DCOpeaion(PW<10s
Ta = 25 °C
1 shot Pulse
1 Drive Operation
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
2 A
1 A
I = 5 A
Pulse Test
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| HAT3008R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N / P Channel Power MOS FET High Speed Power Switching |
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