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參數(shù)資料
| 型號： | HAT2070R |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應管電源開關 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 66K |
| 代理商： | HAT2070R |
HAT2070R
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage
30
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 6 A, V
GS
= 10 V
Note3
I
D
= 6 A,V
GS
= 4.5 V
Note3
I
D
= 6 A, V
DS
=10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
±
20
—
—
V
Gate to source leak current
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
1
Gate to source cutoff voltage
1.0
—
2.5
V
Static drain to source on state
—
11
14
m
m
resistance
—
15
22
Forward transfer admittance
12
20
—
S
Input capacitance
—
1400
—
pF
Output capacitance
Coss
—
340
—
pF
Reverse transfer capacitance
Crss
—
190
—
pF
Total gate charge
Qg
—
23
—
nc
V
DD
= 10 V
V
GS
= 10 V
I
D
= 12 A
V
GS
= 10 V, I
D
= 6 A
V
DD
10 V
R
L
= 1.67
Rg = 4.7
Gate to source charge
Qgs
—
4
—
nc
Gate to drain charge
Qgd
—
4
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
15
—
ns
Rise time
—
18
—
ns
Turn-off delay time
—
50
—
ns
Fall time
—
9
—
ns
Body–drain diode forward voltage
—
0.85
1.10
V
IF = 12 A, V
GS
= 0
Note3
IF = 12 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse recovery
time
Note:
3. Pulse test
—
50
—
ns
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