參數資料
型號: HAT2070R
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel Power MOS FET Power Switching
中文描述: 硅?通道功率MOS場效應管電源開關
文件頁數: 4/12頁
文件大小: 66K
代理商: HAT2070R
HAT2070R
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
30
V
Gate to source voltage
±
20
V
Drain current
12
A
Drain peak current
Note1
96
A
Body-drain diode reverse drain current
12
A
Channel dissipation
2.5
W
Channel to Ambient Thermal
Impedance
θ
ch-a
Note2
50
°
C/W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Tstg
– 55 to + 150
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