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參數(shù)資料
| 型號(hào)： | HAT2105T |
| 廠商： | Renesas Technology Corp. |
| 元件分類(lèi)： | 靜電保護(hù)器 |
| 英文描述： | Ultra low capacitance unidirectional ESD protection diodes, SOD882 (SOD2), Tape reel SMD |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 93K |
| 代理商： | HAT2105T |
REJ03G0384-0200 Rev.2.00 Aug 06, 2007
Page 1 of 3
HAT2105T
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0384-0200
Rev.2.00
Aug 06, 2007
Features
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
RENESAS Package code: PTSP0008JB-B
(Package name:
TSSOP-8 <
TTP-8DV> )
G
D
S
G
D
S
MOS1
MOS2
3
4
1
5
8
6
1, 8 Drain
3, 6 Source
4, 5 Gate
2, 7 NC
1234
8765
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
DR
Pch
Note 2
Pch
Note 3
Tch
Tstg
Ratings
200
±
15
0.5
2
0.5
1
1.5
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
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