參數(shù)資料
型號(hào): HAF1004L
廠商: Renesas Technology Corp.
英文描述: Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.8 to 5.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
中文描述: 硅P通道MOS FET的電源開關(guān)系列
文件頁數(shù): 4/10頁
文件大?。?/td> 122K
代理商: HAF1004L
HAF1004(L), HAF1004(S)
Rev.5.00, Apr.29.2003, page 4 of 10
Main Characteristics
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
–100
–20
–50
–10
–2
–5
–1
–0.5
–0.3
–0.5
Drain Source Voltage V
DS
(V)
–1
–2
–5
–10 –20
–50 –100
D
D
Maximum Safe Operation Area
–10
–8
–6
–4
–2
0
–2
–4
–6
–8
–10
–10 V
–8 V
V = –3.5 V
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
0
–1
–2
–3
–4
–5
25
°
C
Tc = 75
°
C
Tc = 75
°
C
25
°
C
–25
°
C
–25
°
C
Gate to Source Voltage V
GS
(V)
D
D
D
D
Typical Transfer Characteristics
100
μ
s
DCOpeaion(Tc=25
°
C
Ta = 25
°
C
Operation in this area
is limited by R
DS(on)
Thermal shut down
Operation area
–5
–4
–3
–2
–1
–6 V
–4 V
Pulse Test
V = –10 V
Pulse Test
40
30
20
10
0
50
100
150
200
相關(guān)PDF資料
PDF描述
HAF1004 Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.6 to 4.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
HAF1004S Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.7 to 4.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
HAF1009 Silicon P Channel MOS FET Series Power Switching
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