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參數(shù)資料
| 型號： | HAF1009 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel MOS FET Series Power Switching |
| 中文描述： | 硅P通道MOS FET的電源開關系列 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 110K |
| 代理商： | HAF1009 |
Rev.1.00, May.13.2003, page 1 of 10
HAF1009(L), HAF1009(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0029-0100Z
(Previous ADE-208-1525 (Z))
Rev.1.00
May.13.2003
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
Logic level operation (-4 to -6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
Gate resistor
Tempe–
rature
sencing
circuit
Latch
circuit
Gate
shut–
down
circuit
D
S
G
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
1
2, 4
3
1
2
3
1
2
4
4
3
相關PDF資料 |
PDF描述 |
|---|---|
| HAF1009L | Silicon P Channel MOS FET Series Power Switching |
| HAF1009S | Silicon P Channel MOS FET Series Power Switching |
| HAF2012L | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR |
| HAF2012S | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB |
| HAF2014 | |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HAF1009-90L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF1009L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Series Power Switching |
| HAF1009S | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF1010RJ | 制造商:Renesas Electronics Corporation 功能描述: |
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