參數資料
型號: HAF1009L
廠商: Renesas Technology Corp.
英文描述: Silicon P Channel MOS FET Series Power Switching
中文描述: 硅P通道MOS FET的電源開關系列
文件頁數: 1/10頁
文件大?。?/td> 110K
代理商: HAF1009L
Rev.1.00, May.13.2003, page 1 of 10
HAF1009(L), HAF1009(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0029-0100Z
(Previous ADE-208-1525 (Z))
Rev.1.00
May.13.2003
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
Logic level operation (-4 to -6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
Gate resistor
Tempe–
rature
sencing
circuit
Latch
circuit
Gate
shut–
down
circuit
D
S
G
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
1
2, 4
3
1
2
3
1
2
4
4
3
相關PDF資料
PDF描述
HAF1009S Silicon P Channel MOS FET Series Power Switching
HAF2012L TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR
HAF2012S TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB
HAF2014
HAF2015RJ
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