參數(shù)資料
型號: HAF2012L
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR
中文描述: 晶體管| MOSFET的| N溝道| 60V的五(巴西)直| 20A條(丁)|對262VAR
文件頁數(shù): 1/6頁
文件大?。?/td> 30K
代理商: HAF2012L
HAF2012(L),HAF2012(S)
Silicon N Channel MOS FET Series
Power Switching
ADE-208-677A (Z)
2nd. Edition
July 2000
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
D
S
G
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
相關PDF資料
PDF描述
HAF2012S TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB
HAF2014
HAF2015RJ
HAF2017 Datasheet|ADE-208-1637|MAR.01.03|124K
HAF2012 Unidirectional ESD protection for transient voltage suppression, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD
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