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參數(shù)資料
| 型號(hào)： | HAF1004L |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.8 to 5.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 硅P通道MOS FET的電源開關(guān)系列 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 122K |
| 代理商： | HAF1004L |
HAF1004(L), HAF1004(S)
Rev.5.00, Apr.29.2003, page 3 of 10
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain current
I
D1
4
—
—
A
V
GS
= –3.5 V, V
DS
= –2 V
Drain current
I
D2
—
—
–10
mA
V
GS
= –1.2 V, V
DS
= –2 V
Drain to source breakdown voltage V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
=0
Gate to source breakdown voltage V
(BR)GSS
–16
—
—
V
I
G
= –800 μA, V
DS
=0
Gate to source breakdown voltage V
(BR)GSS
2.5
—
—
V
I
G
= 100 μA, V
DS
=0
I
GSS1
—
—
–100
μA
V
GS
= –8 V, V
DS
=0
I
GSS2
—
—
–50
μA
V
GS
= –3.5 V, V
DS
=0
I
GSS3
—
—
–1
μA
V
GS
= –1.2 V, V
DS
=0
Gate to source leak current
I
GSS4
—
—
100
μA
V
GS
= 2.4 V, V
DS
=0
I
GS(OP)1
—
–0.8
—
mA
V
GS
= –8 V, V
DS
=0
Input current (shut down)
I
GS(OP)2
—
–0.35 —
mA
V
GS
= –3.5 V, V
DS
=0
Zero gate voltage drain current
I
DSS
—
—
–10
μA
V
DS
= –60 V, V
GS
= 0
Gate to source cut off voltage
V
GS(off)
–1.1
—
–2.25 V
V
DS
= –10 V, I
D
= –1 mA
I
D
=–2.5 A, V
DS
=–10 V
Note3
I
D
= –2.5 A, V
GS
= –10 V
Note3
Forward transfer admittance
|y
fs
|
2
4
—
S
m
Static drain to source on state
resistance
R
DS(on)
—
140
200
Static drain to source on state
resistance
R
DS(on)
—
200
340
m
I
D
= –2.5 A, V
GS
= –4 V
Note3
Output capacitance
Coss
—
326
―
pF
V
DS
= –10 V, V
GS
=0, f = 1 MHz
Turn-on delay time
t
d(on)
—
2
―
μs
Rise time
t
r
—
7.6
—
μs
Turn off delay time
t
d(off)
—
3.2
―
μs
Fall time
t
f
—
3.2
—
μs
V
GS
= –5 V, I
D
= –2.5 A,
R
L
= 12
Body-drain diode forward voltage
V
DF
—
–0.9
—
V
I
F
= –5A, V
GS
= 0
Body-drain diode reverse recovery
time
t
rr
—
77
—
ns
I
F
= –5 A, V
GS
= 0
diF/dt = 50 A/μs
t
os1
—
8.4
—
ms
V
GS
= –5 V, V
DD
= –16 V
Over lord shut down
operation time
note4
t
os2
—
2.4
—
ms
V
GS
= –5 V, V
DD
= –24 V
Notes: 3. Pulse test
4. Including the junction temperature rise of the lorded condition
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAF1004 | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.6 to 4.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| HAF1004S | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.7 to 4.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| HAF1009 | Silicon P Channel MOS FET Series Power Switching |
| HAF1009L | Silicon P Channel MOS FET Series Power Switching |
| HAF1009S | Silicon P Channel MOS FET Series Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF1004S | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Series Power Switching |
| HAF1008 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Series Power Switching |
| HAF1008-90L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF1008L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Series Power Switching |
| HAF1008S | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Series Power Switching |
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