參數資料
型號: HAF1004L
廠商: Renesas Technology Corp.
英文描述: Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.8 to 5.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
中文描述: 硅P通道MOS FET的電源開關系列
文件頁數: 2/10頁
文件大?。?/td> 122K
代理商: HAF1004L
HAF1004(L), HAF1004(S)
Rev.5.00, Apr.29.2003, page 2 of 10
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
–16
V
Gate to source voltage
V
GSS
2.5
V
Drain current
I
D
–5
A
Drain peak current
I
D (pulse)
Note1
–10
A
Body-drain diode reverse drain current
I
DR
Pch
Note2
–5
A
Cannel dissipation
20
W
Cannel temperature
Tch
150
°C
Storage temperature
Notes: 1. PW
0
μ
s, duty cycle
1%
2. Value at Ta = 25°C
Tstg
–55 to +150
°C
Typical Operation Characteristics
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
V
IH
–3.5
V
Input voltage
V
IL
–1.2
V
I
IH1
–100
μA
Vi = –8 V, V
DS
= 0
I
IH2
–50
μA
Vi = –3.5 V, V
DS
= 0
Input current
(Gate non shut down)
I
IL
–1
μA
Vi = –1.2 V, V
DS
= 0
I
IH(sd)1
–0.8
mA
Vi = –8 V, V
DS
= 0
Input current
(Gate shut down)
I
IH(sd)2
–0.35
mA
Vi = –3.5 V, V
DS
= 0
Shut down temperature
Tsd
175
°C
Cannel temperature
Gate operation voltage
Vop
–3.5
–12
V
相關PDF資料
PDF描述
HAF1004 Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.6 to 4.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
HAF1004S Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.7 to 4.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
HAF1009 Silicon P Channel MOS FET Series Power Switching
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