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參數(shù)資料
| 型號(hào)： | GT2622 |
| 廠商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 320K |
| 代理商： | GT2622 |
1/4
ISSUED DATE :2006/01/16
REVISED DATE :
G
G T
T 22662222
N
N -- C
C H
H A
A N
N N
N E
E L
L E
E N
N H
H A
A N
N C
C E
E M
M E
E N
N T
T M
M O
O D
D E
E P
P O
O W
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E R
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Description
The GT2622 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial applications.
Features
*Low Gate Charge
*Surface Mount package
*RoHS Compliant
Package Dimensions
Millimeter
Dimensions
REF.
Min.
Max.
REF.
Millimeter
A
2.70
3.10
G
1.90 REF.
B
2.60
3.00
H
1.20 REF.
C
1.40
1.80
I
0.12 REF.
D
0.30
0.55
J
0.37 REF.
E
0
0.10
K
0.60 REF.
F
0°
10°
L
0.95 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
50
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current3, VGS@10V
ID @TA=25 :
520
mA
Continuous Drain Current3, VGS@10V
ID @TA=70 :
410
mA
Pulsed Drain Current1
IDM
1.5
A
Total Power Dissipation
PD @TA=25 :
0.8
W
Linear Derating Factor
0.006
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3 Max.
Rthj-a
150
: /W
BVDSS
50V
RDS(ON)
1.8
ID
520mA
Pb Free Plating Product
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