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參數(shù)資料
| 型號(hào)： | GT2623 |
| 廠(chǎng)商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 346K |
| 代理商： | GT2623 |
1/4
ISSUED DATE :2005/05/06
REVISED DATE :
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Description
The GT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GT2623 is universally used for all commercial-industrial applications.
Features
*Low Gate Charge
*Low On-resistance
Package Dimensions
Millimeter
Dimensions
REF.
Min.
Max.
REF.
Millimeter
A
2.70
3.10
G
1.90 REF.
B
2.60
3.00
H
1.20 REF.
C
1.40
1.80
I
0.12 REF.
D
0.30
0.55
J
0.37 REF.
E
0
0.10
K
0.60 REF.
F
0°
10°
L
0.95 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
f 20
V
Continuous Drain Current3
ID @TA=25 :
-2
A
Continuous Drain Current3
ID @TA=70 :
-1.6
A
Pulsed Drain Current1
IDM
-20
A
Total Power Dissipation
PD @TA=25 :
1.2
W
Linear Derating Factor
0.01
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient3 Max.
Rthj-a
110
/W
BVDSS
-30V
RDS(ON)
170m
ID
-2.0A
Pb Free Plating Product
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