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參數(shù)資料
| 型號： | GT6924E |
| 廠商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL MOSFET WITH SWITCHING DIODE |
| 中文描述： | N溝道MOSFET的開關(guān)，其開關(guān)二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 287K |
| 代理商： | GT6924E |
GT6924E
Page: 1/4
ISSUED DATE :2006/01/25
REVISED DATE :
G
G T
T 66992244E
E
N
N -- C
C H
H A
A N
N N
N E
E L
L M
M O
O S
S F
F E
E T
T W
W II T
T H
H S
S C
C H
H O
O T
T T
T K
K Y
Y D
D II O
O D
D E
E
Description
The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Lower on-resistance
*Fast Switching Characteristic
*Included Schottky Diode
Package Dimensions
Millimeter
Dimensions
REF.
Min.
Max.
REF.
Millimeter
A
2.70
3.10
G
1.90 REF.
B
2.60
3.00
H
1.20 REF.
C
1.40
1.80
I
0.12 REF.
D
0.30
0.55
J
0.37 REF.
E
0
0.10
K
0.60 REF.
F
0°
10°
L
0.95 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage (MOSFET)
VDS
20
V
Gate-Source Voltage (MOSFET)
VGS
± 6
V
Continuous Drain Current3 (MOSFET)
ID @TA=25 :
1.0
A
Continuous Drain Current3 (MOSFET)
ID @TA=70 :
0.8
A
Pulsed Drain Current1 (MOSFET)
IDM
8
A
Reverse Voltage (Schottky)
VKA
20
V
Average Forward Current (Schottky)
IF
0.5
A
Pulsed Forward Current1 (Schottky)
IFM
2.0
A
Total Power Dissipation (MOSFET)
PD @TA=25 :
0.9
W
Total Power Dissipation (Schottky)
0.9
W
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +125
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient
3
(MOSFET) M
ax.
Rthj-a
110
: /W
Thermal Resistance Junction-ambient
3
(Schottky) M
ax.
110
: /W
BVDSS
20V
RDS(ON)
600m
ID
1A
Pb Free Plating Product
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