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參數(shù)資料
| 型號： | GT3585 |
| 廠商： | GTM CORPORATION |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 436K |
| 代理商： | GT3585 |
GT3585
Page: 1/7
ISSUED DATE :2006/02/16
REVISED DATE :
G
G T
T 33558855
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GT3585 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The SOT-26 package is universally used for all commercial-industrial surface mount applications.
Features
*Low Gate Change
*Low On-resistance
*RoHS Compliant
Package Dimensions
Millimeter
Dimensions
REF.
Min.
Max.
REF.
Millimeter
A
2.70
3.10
G
1.90 REF.
B
2.60
3.00
H
1.20 REF.
C
1.40
1.80
I
0.12 REF.
D
0.30
0.55
J
0.37 REF.
E
0
0.10
K
0.60 REF.
F
0°
10°
L
0.95 REF.
Absolute Maximum Ratings
Ratings
Parameter
Symbol
N-channel P-channel
Unit
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
VGS
± 12
V
Continuous Drain Current3
ID @TA=25 :
3.5
-2.5
A
Continuous Drain Current3
ID @TA=70 :
2.8
-1.97
A
Pulsed Drain Current1
IDM
10
-10
A
Total Power Dissipation
PD @TA=25 :
1.14
W
Linear Derating Factor
0.01
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-a
110
/
: W
Pb Free Plating Product
N-CH BVDSS
20V
N-CH RDS(ON) 75m
N-CH ID
3.5A
P-CH BVDSS
-20V
N-CH RDS(ON) 160m
N-CH ID
-2.5A
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