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參數(shù)資料
| 型號(hào)： | GT6301K |
| 廠商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 290K |
| 代理商： | GT6301K |
GT6301K
Page: 1/4
ISSUED DATE :2006/01/09
REVISED DATE :
G
G T
T 66330011K
K
N
N -- C
C H
H A
A N
N N
N E
E L
L E
E N
N H
H A
A N
N C
C E
E M
M E
E N
N T
T M
M O
O D
D E
E P
P O
O W
W E
E R
R M
M O
O S
S F
F E
E T
T
Description
The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GT6301K is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
*RoHS Compliant
Package Dimensions
Millimeter
Dimensions
REF.
Min.
Max.
REF.
Millimeter
A
2.70
3.10
G
1.90 REF.
B
2.60
3.00
H
1.20 REF.
C
1.40
1.80
I
0.12 REF.
D
0.30
0.55
J
0.37 REF.
E
0
0.10
K
0.60 REF.
F
0°
10°
L
0.95 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±16
V
Continuous Drain Current3, VGS@10V
ID @TA=25 :
640
mA
Continuous Drain Current3, VGS@10V
ID @TA=70 :
500
mA
Pulsed Drain Current1,2
IDM
950
mA
Total Power Dissipation
PD @TA=25 :
1.2
W
Linear Derating Factor
0.01
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3 Max.
Rthj-a
110
: /W
BVDSS
30V
RDS(ON)
1
ID
640mA
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相關(guān)代理商/技術(shù)參數(shù) |
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| GT63L25A | 制造商:Carlo Gavazzi 功能描述:TOR LUG 63A 18-25A |
| GT63L36A | 制造商:Carlo Gavazzi 功能描述:TOR LUG 63A 24-36A |
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