參數(shù)資料
型號： GS8662Q18BD-357
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 4M X 18 STANDARD SRAM, 0.45 ns, PBGA165
封裝： 15 X 13 MM, 1 MM PITCH, FPBGA-165
文件頁數(shù)： 14/36頁
文件大小： 850K
代理商： GS8662Q18BD-357
Operating Currents
Parameter
Symbol
Test Conditions
-357
-333
-300
-250
-200
Notes
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating Current (x36):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
1195
1205
1100
1110
1060
1070
905
740
750
2, 3
Operating Current (x18):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
985
995
920
930
850
860
720
730
600
610
2, 3
Operating Current (x9):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
985
995
920
930
850
860
720
730
600
610
2, 3
Operating Current (x8):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
985
995
920
930
850
860
720
730
600
610
2, 3
Standby Current (NOP):
DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
≤ 0.2 V or ≥ VDD – 0.2
V
275
285
270
280
255
265
240
250
220
230
2, 4
Notes:
1.
Power measured with output pins floating.
2.
Minimum cycle, IOUT = 0 mA
3.
Operating current is calculated with 50% read cycles and 50% write cycles.
4.
Standby Current is only after all pending read and write burst operations are completed.
GS8662Q08/09/18/36BD-357/333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 3/2011
21/36
2011, GSI Technology
相關(guān)PDF資料
PDF描述
GS8662Q18BGD-357IT 4M X 18 STANDARD SRAM, 0.45 ns, PBGA165
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